VS-STPS1045B-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Popular D-PAK outline

VS-STPS1045B-M3
Vishay Semiconductors
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
C_T
L_S
dV/dt
TEST CONDITIONS
VALUES
10 A
20 A
T_J = 25 °C
0.63
0.84
10 A
20 A
T_J = 125 °C
0.57
0.72
T_J = 25 °C
T_J = 125 °C
0.2
V_R = Rated V_R
15
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C 760
Measured lead to lead 5 mm from package body
5.0
Rated V_R
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
R_thJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
VALUES UNITS
- 40 to 175 °C
3.0
°C/W
50
0.3
g
0.01
oz.
STPS1045B
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93327
[e-mail], [e-mail], [e-mail]
Revision: 03-Nov-10