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| VS-ST173C12CFK0L Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors | |||
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www.vishay.com
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
760
660
730
590
600
490
350
270
50
VDRM
50
40
55
47/0.22
VS-ST173C Series
Vishay Semiconductors
ITM
180° el
1200
1030
1260
1080
1200
1030
850
720
50
VDRM
-
40
55
47/0.22
ITM
100 µs
5570
4920
2800
2460
1620
1390
800
680
50
VDRM
-
40
55
47/0.22
UNITS
A
V
A/μs
°C
ïï¯Î¼F
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state currentï
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle, ï
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2ït
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine waveï
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms No voltage ï
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage ï
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
ITM = 600 A, TJ = TJ maximum, ï
tp = 10 ms sine wave pulse
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 ï, IG = 1 A
VALUES
330 (120)
55 (85)
610
4680
4900
3940
4120
110
100
77
71
1100
2.07
1.55
1.61
0.87
0.77
600
1000
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate ï
of rise of turned on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
VALUES
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μsï
Resistive load, gate pulse: 10 V, 5 ï source
TJ = TJ maximum, ï
ITM = 300 A, commutating dI/dt = 20 A/μsï
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
1000
1.1
15
30
UNITS
A/μs
μs
Revision: 16-Dec-13
2
Document Number: 94366
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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