VS-SD853CS50K Datasheet, PDF (2/8 Pages) Vishay Siliconix – High voltage ratings up to 4500 V

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VS-SD853C..S50K Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
SYMBOL
I_F(AV)
I_F(RMS)
I_FSM
I²t
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J
maximum
t = 10 ms _{50 % VRRM}
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 2000 A, T_J = 125 °C;
t_p = 10 ms sinusoidal wave
VALUES
990 (420)
55 (85)
1800
19 000
19 900
16 000
16 750
1805
1645
1280
1165
18 050
1.50
1.67
0.70
0.65
2.90
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T_J = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T_J = 125 °C
CODE
I_pk
I_FM
t_rr at 25 % I_RRM
SQUARE
dI/dt
V_r
t_rr at 25 % I_RRM
Q_rr
I_rr
(μs)
PULSE
(A/μs)
(V)
(μs)
(μC)
(A)
(A)
dir
dt
S50
5.0
1000
100
- 50
6.5
1000
270
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mW
V
t_rr
t
Q_rr
I_RM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 125
°C
-40 to 150
0.04
K/W
0.02
22 250 (2250)
N (kg)
425
g
DO-200AC (K-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.0017
0.0019
120°
0.0021
0.0021
90°
0.0026
0.0027
60°
0.039
0.0039
30°
0.0067
0.0067
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.0012
0.0012
0.0021
0.0021
0.0029
0.0029
0.0041
0.0041
0.0068
0.0068
TEST CONDITIONS
T_J = T_J maximum
UNITS
K/W
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
2
Document Number: 93182
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