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| VS-SD800CL Datasheet, PDF (2/8 Pages) Vishay Siliconix – Wide current range | |||
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www.vishay.com
VS-SD800C..L Series
Vishay Semiconductors
ï
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current ï
at heatsink temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forwardï
slope resistance
High level value of forwardï
slope resistance
I2ït
VF(TO)1
VF(TO)2
rf1
rf2
Maximum forward voltage drop
VFM
TEST CONDITIONS
SD800C..L
24 to 36 40 to 45
180° conduction, half sine waveï
Double side (single side) cooled
1180 (550) 1065 (490)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
2280
2040
t = 10 ms
t = 8.3 ms
No voltage ï
reapplied
13 600
14 240
12 200
12 800
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % VRRMï
reapplied
No voltage ï
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
11 440
11 980
925
845
10 250
10 750
745
680
t = 10 ms
t = 8.3 ms
50 % VRRMï
reapplied
654
526
597
480
t = 0.1 to 10 ms, no voltage reapplied
9250
7450
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
0.90
1.10
1.06
1.18
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
0.38
0.44
(I > ï° x IF(AV)), TJ = TJ maximum
Ipk = 2000 A, TJ = TJ maximum, ï
tp = 10 ms sinusoidal wave
0.34
0.41
1.66
1.95
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operatingï
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,ï
junction to heatsink
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 150
°C
- 55 to 200
0.073
K/W
0.031
14 700 (1500)
N (kg)
255
g
DO-200AB (B-PUK)
ïRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
TEST CONDITIONS
SINGLE SIDE DOUBLE SIDE
UNITS
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
TJ = TJ maximum
K/W
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Note
⢠The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 04-Apr-14
2
Document Number: 93553
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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