VS-SD603CC Datasheet, PDF (2/9 Pages) Vishay Siliconix – High voltage ratings up to 2200 V

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VS-SD603C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current 
at heatsink temperature
Maximum RMS current
SYMBOL
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle 
non-repetitive forward current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J
maximum
t = 10 ms _{100 % VRRMï€} 
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
I_pk = 1885 A, T_J = 25 °C; t_p = 10 ms sinusoidal wave
VALUES
600 (300)
55 (75)
942
8320
8715
7000
7330
346
316
245
224
3460
1.36
1.81
0.87
0.67
2.97
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T_J = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T_J = 125 °C
CODE
I_pk
t_rr AT 25 % I_RRM
SQUARE
dI/dt
V_r
t_rr AT 25 % I_RRM
Q_rr
I_rr
I_FM
(μs)
PULSE
(A/μs)
(V)
(μs)
(μC)
(A)
(A)
S10
1.0
2.0
45
34
dir
dt
S15
1.5
1000
25
- 30
3.2
87
51
S20
2.0
3.5
97
55
UNITS
A
°C
A
kA²s
kA²ïƒ–s
V
mW
V
t_rr
t
Q_rr
I_RM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
- 40 to 125
°C
- 40 to 150
0.076
K/W
0.038
9800 (1000) N (kg)
83
g
B-43
R_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.006
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
T_J = T_J maximum
K/W
60°
0.015
0.015
0.016
0.015
30°
0.026
0.025
0.026
0.025
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 14-Jan-14
2
Document Number: 93178
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