VS-SD400N Datasheet, PDF (2/7 Pages) Vishay Siliconix – High surge current capabilities

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VS-SD400N/R Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current 
at case temperature
I_F(AV)
180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I_F(RMS)
I_FSM
I²t
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
DC at 110 °C case temperature
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial 
T_J = T_J maximum
t = 10 ms _{100 % VRRMï€} 
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I_F(AV) < I <  x I_F(AV)),
T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
(16.7 % x  x I_F(AV) < I <  x I_F(AV)),
T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
I_pk = 1500 A, T_J = T_J maximum,
t_p = 10 ms sinusoidal wave
VALUES
400
120
480
100
630
8250
8640
6940
7270
340
311
241
220
3400
0.80
0.85
0.55
0.51
1.62
UNITS
A
°C
A
°C
A
kA²s
kA²ïƒ–s
V
mW
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed 
mounting torque ± 10 %
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
VALUES
-40 to 190
-55 to 200
0.11
0.04
UNITS
°C
K/W
27
Nm
250
g
DO-205AB (DO-9)
Revision: 25-Nov-13
2
Document Number: 93548
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