VS-SD1100CC Datasheet, PDF (2/8 Pages) Vishay Siliconix – High voltage ratings up to 3200 V

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VS-SD1100C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current 
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward, 
non-repetitive current
Maximum I²t for fusing
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward 
slope resistance
High level value of forward 
slope resistance
Maximum forward voltage drop
SYMBOL
I_F(AV)
I_F(RMS)
I_FSM
I²t
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
SD1100C..C
04 to 20 25 to 32
180° conduction, half sine wave
Double side (single side) cooled
1400 (795) 1100 (550)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
2500
2000
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
13 000
13 600
10 500
11 000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J
maximum
10 930
11 450
846
772
8830
9250
551
503
t = 10 ms _{100 % VRRMï€} 
t = 8.3 ms ^reapplied
598
390
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
0.78
0.94
0.84
0.88
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum 0.35
0.40
(I >  x I_F(AV)), T_J = T_J maximum
I_pk = 1500 A, T_J = T_J maximum 
t_p = 10 ms sinusoidal wave
0.26
0.38
1.31
1.44
UNITS
A
°C
A
kA²s
kA²ïƒ–s
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating 
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
T_J
T_Stg
R_thJ-hs
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
SD1100C..C
04 to 20 25 to 32
UNITS
- 40 to 180 - 40 to 150
- 55 to 200
0.076
0.038
9800 (1000)
83
B-43
°C
K/W
N (kg)
g
R_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
0.007
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
T_J = T_J maximum
K/W
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 14-Jan-14
2
Document Number: 93535
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