VS-SD1100C12L Datasheet, PDF (2/8 Pages) Vishay Siliconix – Standard Recovery Diodes (Hockey PUK Version), 1170 A

SD1100C..L Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Hockey PUK Version),
1170 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
16
SD1100C..L
20
25
30
32
V_RRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
2500
3000
3200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
2600
3100
3300
I_RRM MAXIMUM
AT T_J = T_J MAXIMUM
mA
15
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
I_F(AV)
I_F(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
Maximum forward voltage drop
V_FM
TEST CONDITIONS
SD1100C..L
04 to 20 25 to 32
180° conduction, half sine wave
Double side (single side) cooled
1170 (600) 910 (420)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
2080
1660
t = 10 ms
t = 8.3 ms
No voltage
reapplied
13 000
13 600
10 500
11 000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
10 930
11 450
846
772
8830
9250
551
503
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
598
390
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
0.78
0.94
0.84
0.88
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
0.35
0.40
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 1500 A, T_J = T_J maximum,
t_p = 10 ms sinusoidal wave
0.26
0.38
1.31
1.44
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
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Document Number: 93536
Revision: 14-May-08