VS-P400 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Power Modules, Passivated Assembled Circuit Elements, 40 A

www.vishay.com
VS-P400 Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
Maximum peak, one-cycle
non-repetitive on-state or
forward current
SYMBOL
I_O
I_TSM,
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum non-repetitive rate of rise of
turned-on current
Maximum holding current
Maximum latching current
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
V_FM
dI/dt
I_H
I_L
TEST CONDITIONS
Full bridge circuits
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms _{100 % VRRM}
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
I²t for time tx = I²ïƒ–t · tx
(16.7 % x  x I_T(AV) < I <  x I_T(AV)), T_J = T_J maximum
(I >  x I_T(AV)), T_J = T_J maximum
(16.7 % x  x I_T(AV) < I <  x I_T(AV)), T_J = T_J maximum
(I >  x I_T(AV)), T_J = T_J maximum
I_TM =  x I_T(AV)
T_J = 25 °C
I_FM =  x I_F(AV)
T_J = 25 °C
T_J = 125 °C from 0.67 V_DRM
I_TM =  x I_T(AV), I_g = 500 mA, t_r < 0.5 μs, t_p > 6 μs
T_J = 25 °C anode supply = 6 V, resistive load
VALUES
40
80
385
400
325
340
745
680
530
480
7450
0.83
1.03
9.61
7.01
1.4
1.4
200
130
250
UNITS
A
°C
A
A²s
A²ïƒ–s
V
m
V
V
A/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current at V_RRM, V_DRM
Maximum peak reverse leakage current
RMS isolation voltage
SYMBOL
TEST CONDITIONS
dV/dt
I_RRM,
I_DRM
I_RRM
V_ISOL
T_J = 125 °C, exponential to 0.67 V_DRM gate open
T_J = 125 °C, gate open circuit
T_J = 25 °C
50 Hz, circuit to base, all terminals shorted,
T_J = 25 °C, t = 1 s
VALUES
200
10
100
2500
UNITS
V/μs
mA
μA
V
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
P_GM
P_G(AV)
I_GM
-V_GM
V_GT
I_GT
V_GD
I_GD
TEST CONDITIONS
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
Anode supply =
6 V resistive load
T_J = 125 °C, rated V_DRM applied
VALUES
8
2
2
10
3
2
1
90
60
35
0.2
2
UNITS
W
A
V
V
mA
V
mA
Revision: 27-Mar-14
2
Document Number: 93755
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000