VS-MUR1020CTPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 10 A FRED Pt®

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VS-MUR1020CTPbF, VS-MUR1020CT-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
-
Reverse recovery time
I_F = 0.5 A, I_R = 1.0 A, I_REC = 0.25 A
t_rr
T_J = 25 °C
-
-
-
24
T_J = 125 °C
-
35
Peak recovery current
T_J = 25 °C
I_F = 5 A
-
3.3
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 160 V
-
5.0
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
33
-
76
MAX.
35
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Thermal resistance,
junction to ambient per leg
R_thJA
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AB
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
5
-
50
0.5
-
2.0
-
0.07
-
12
-
(10)
MUR1020CT
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 11-Aug-11
2
Document Number: 94076
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