VS-MBRS360-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-MBRS360-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
C_T
L_S
dV/dt
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 125 °C
6A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
T_J = 125 °C
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.57
0.72
0.51
0.62
-
-
-
-
-
-
MAX.
0.74
0.9
0.61
0.77
0.5
20
30
180
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance, 
junction to lead
Maximum thermal resistance,
junction to ambient
T_J ⁽¹⁾, T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
-55 to +150
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
36
Revision: 26-Aug-14
2
Document Number: 95749
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