VS-MBRS140-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low forward voltage drop

www.vishay.com
VS-MBRS140-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
1A
T_J = 25 °C
2A
1A
T_J = 125 °C
2A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.52
0.70
0.48
0.63
-
-
-
-
-
MAX.
0.6
0.77
0.53
0.71
0.1
4.0
80
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance, 
junction to lead
Maximum thermal resistance, 
junction to ambient
T_J ⁽¹⁾, T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
See fig. 4
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
-55 to +150
UNITS
°C
36
°C/W
80
0.10
g
0.003
oz.
14
Revision: 26-Aug-14
2
Document Number: 95747
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000