VS-MBRD320-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Popular D-PAK outline

VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop 
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current 
See fig. 2
I_RM ⁽¹⁾
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 125 °C
6A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.48
0.58
0.41
0.55
0.02
10.7
189
5.0
-
MAX.
0.6
0.7
0.49
0.625
0.2
20
-
-
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range T_J ⁽¹⁾
Maximum storage temperature range
Maximum thermal resistance, 
junction to case
T_Stg
R_thJC
DC operation
See fig. 4
Maximum thermal resistance, 
junction to ambient
R_thJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) ^{d--d--P--T---t}_-Jo---^t _{< -R----t-1-h---J--A-- thermal runaway condition for a diode on its own heatsink}
VALUES
-40 to +150
-40 to +175
UNITS
°C
6.0
°C/W
80
0.3
g
0.01
oz.
MBRD320
MBRD330
MBRD340
Revision: 22-Nov-16
2
Document Number: 93323
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