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VS-MBR4060WTPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Schottky Rectifier
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VS-MBR4060WTPbF, VS-MBR4060WT-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM
CT
LS
dV/dt
TEST CONDITIONS
20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.72
0.62
1.0
100
720
7.5
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC
VALUES
- 55 to 150
UNITS
°C
2.20
1.10
°C/W
50
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBR4060WT
Revision: 30-Aug-11
2
Document Number: 94296
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