VS-MBR30WTPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – High frequency operation

VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum instantaneous reverse current I_RM ⁽¹⁾
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
V_F(TO)
r_T
C_T
L_S
dV/dt
30 A
20 A
30 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
Rated DC voltage
T_J = T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V_R
VALUES
0.76
0.60
0.72
1.0
100
0.29
13.8
800
7.5
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC (JEDEC)
VALUES
- 65 to 150
- 65 to 175
UNITS
°C
1.40
°C/W
0.24
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBR3035WT
MBR3045WT
Revision: 30-Aug-11
2
Document Number: 94293
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