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VS-MBR1635PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Schottky Rectifier
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
16 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.63
0.57
0.2
40
1400
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC (JEDEC)
VALUES
- 65 to 150
- 65 to 175
UNITS
°C
1.50
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBR1635
MBR1645
Revision: 29-Aug-11
2
Document Number: 94286
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