VS-MBR10PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – High frequency operation

VS-MBR10...PbF Series, VS-MBR10...-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum instantaneous reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
V_F(TO)
r_t
C_T
L_S
dV/dt
20 A
10 A
20 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
Rated DC voltage
T_J = T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V_R
VALUES
0.84
0.57
0.72
0.1
15
0.354
17.6
600
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
(only for TO-220)
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
VALUES
- 65 to 150
- 65 to 175
UNITS
°C
2.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBR1035
MBR1045
Revision: 29-Aug-11
2
Document Number: 94284
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