VS-HFA50PA60CPBF Datasheet, PDF (2/10 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 2 x 25

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VS-HFA50PA60CPbF, VS-HFA50PA60C-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
600
-
I_F = 25 A
-
1.3
Maximum forward voltage
V_FM
I_F = 50 A
See fig. 1
-
1.5
I_F = 25 A, T_J = 125 °C
-
1.3
Maximum reverse
leakage current
V_R = V_R rated
-
1.5
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
600
Junction capacitance
Series inductance
C_T
V_R = 200 V
See fig. 3
-
55
L_S
Measured lead to lead 5 mm from package
body
-
12
MAX.
-
1.7
2.0
1.7
20
2000
100
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 10
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
23
-
50
-
105
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t_b
See fig. 8
I_RRM1
I_RRM2
Q_rr1
Q_rr2
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 25 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
4.5
-
8.0
-
112
-
420
-
250
-
160
MAX.
-
75
160
10
15
375
1200
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
T_lead
0.063" from case (1.6 mm) for 10 s
R_thJC
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC
MIN.
-
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
°C
-
0.42
K/W
-
40
0.25
-
6.0
-
0.21
-
12
-
(10)
HFA50PA60C
g
oz.
kgf · cm
(lbf · in)
Revision: 19-Aug-11
2
Document Number: 94074
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