VS-HFA32PA120CPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA32PA120CPbF, VS-HFA32PA120C-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
1200
-
I_F = 16 A
-
2.5
Maximum forward voltage
V_FM
I_F = 32 A
See fig. 1
-
3.2
I_F = 16 A, T_J = 125 °C
-
2.3
Maximum reverse
leakage current
V_R = V_R rated
-
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
0.75
375
Junction capacitance
C_T
V_R = 200 V
See fig. 3
-
27
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Reverse recovery time
See fig. 5, 10
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
30
-
-
90
135
-
164
245
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t_b
See fig. 8
I_RRM1
I_RRM2
Q_rr1
Q_rr2
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 16 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
5.8
10
-
8.3
15
-
260
675
-
680
1838
-
120
-
-
76
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
°C
-
80
K/W
0.50
-
2.0
-
0.07
-
12
-
(10)
HFA32PA120C
g
oz.
kgf · cm
(lbf · in)
Revision: 14-Jul-15
2
Document Number: 94073
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