VS-HFA30PB120PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 30 A

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VS-HFA30PB120PbF, VS-HFA30PB120-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
1200
I_F = 30 A
-
Maximum forward voltage
V_FM
I_F = 60 A
See fig. 1
-
I_F = 30 A, T_J = 125 °C
-
Maximum reverse 
leakage current
V_R = V_R rated
-
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
Junction capacitance
Series inductance
C_T
V_R = 200 V
See fig. 3
-
Measured lead to lead 5 mm from package
L_S
body
-
TYP.
-
2.4
3.1
2.3
1.3
1100
50
8.0
MAX.
-
4.1
5.7
4.0
40
4000
75
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 10
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
47
-
110
-
170
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 30 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
10
-
16
-
650
-
1540
Peak rate of fall of recovery
current during t_b
See fig. 8
dI_(rec)M/dt1 T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
270
-
240
MAX.
-
170
260
15
24
980
2310
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance, 
junction to case
Thermal resistance, 
junction to ambient
Thermal resistance, 
case to heatsink
T_lead
R_thJC
R_thJA
R_thCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.36
UNITS
°C
-
80
°C/W
0.50
-
5.61
-
0.198
-
12
-
(10)
HFA30PB120
g
oz.
kgf · cm
(lbf · in)
Revision: 14-May-13
2
Document Number: 94069
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