VS-HFA16TA60CSPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA16TA60CSPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
600
I_F = 8.0 A
-
Maximum forward voltage
V_FM
I_F = 16 A
See fig. 1
-
I_F = 8.0 A, T_J = 125 °C
-
Maximum reverse 
leakage current
V_R = V_R rated
-
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
-
Junction capacitance
C_T
V_R = 200 V
See fig. 3
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery 
current during t_b 
See fig. 11 & 12
t_rr
t_rr1
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
dI_(rec)M/dt1
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 8.0 A
dI_F/dt = 200 A/μs
V_R = 200 V
T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
18
-
-
37
55
-
55
90
-
3.5
5.0
-
4.5
8.0
-
65
138
-
124
360
-
240
-
-
210
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case, 
single leg conducting
Junction to case,
both legs conducting
Thermal resistance, 
junction to ambient
T_lead
0.063" from case (1.6 mm) for 10 s
R_thJC
R_thJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style TO-263AB (D²PAK)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
3.5
UNITS
°C
-
1.75
K/W
-
80
2
-
0.07
-
12
-
(10)
HFA16TA60CS
g
oz.
kgf · cm
(lbf in)
Revision: 09-May-16
2
Document Number: 94059
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000