VS-HFA16PA120CPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA16PA120CPbF, VS-HFA16PA120C-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
1200
-
I_F = 8.0 A
-
2.6
Maximum forward voltage
V_FM
I_F = 16 A
-
3.4
I_F = 8.0 A, T_J = 125 °C
-
2.4
Maximum reverse
leakage current
V_R = V_R rated
I_RM
T_J = 125 °C, V_R = 0.8 x V_R rated
-
0.31
-
135
Junction capacitance
C_T
V_R = 200 V
-
11
Series inductance
L_S
Measured lead to lead 5 mm from package
-
8.0
MAX.
-
3.3
4.3
3.1
10
1000
20
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
28
-
Reverse recovery time
t_rr1
T_J = 25 °C
t_rr2
T_J = 125 °C
-
63
95
-
106
160
Peak recovery current
Reverse recovery charge
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 8.0 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
4.5
8.0
-
6.2
11
-
140
380
-
335
880
Peak rate of recovery current
during t_b
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
-
133
-
-
85
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
40
K/W
0.25
-
6.0
-
0.21
-
12
-
(10)
HFA16PA120C
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94055
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