VS-HFA08TB60HN3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA08TB60HN3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
Maximum forward voltage
I_F = 8.0 A
V_FM
I_F = 16 A
I_F = 8.0 A, T_J = 125 °C
See fig. 1
Maximum reverse
leakage current
I_RM
V_R = V_R rated
T_J = 125 °C, V_R = 0.8 x V_R rated
See fig. 2
Junction capacitance
Series inductance
C_T
V_R = 200 V
See fig. 3
L_S
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
18
Reverse recovery time
t_rr1
T_J = 25 °C
-
37
Peak recovery current
Reverse recovery charge
Peak rate of fall of
recovery current during t_b
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 8.0 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
55
-
3.5
-
4.5
-
65
-
124
-
240
-
210
MAX.
-
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
3.5
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
-
12
(10)
HFA08TB60H
g
oz.
kgf · cm
(lbf · in)
Revision: 15-Jul-15
2
Document Number: 94970
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000