VS-HFA08TB120SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA08TB120SPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
I_F = 8.0 A
Maximum forward voltage
V_FM
I_F = 16 A
I_F = 8.0 A, T_J = 125 °C
Maximum reverse 
leakage current
I_RM
V_R = V_R rated
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
C_T
V_R = 200 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.6
3.4
2.4
0.31
135
11
8.0
MAX.
-
3.3
4.3
3.1
10
1000
20
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
t_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
t_rr1
T_J = 25 °C
-
28
-
63
t_rr2
T_J = 125 °C
-
106
Peak recovery current
Reverse recovery charge
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 8.0 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
4.5
-
6.2
-
140
-
335
Peak rate of fall of
recovery current during t_b
dI_(rec)M/dt1
dI_(rec)M/dt2
T_J = 25 °C
T_J = 125 °C
-
133
-
85
MAX.
-
95
160
8.0
11
380
880
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
T_lead
R_thJC
R_thJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Weight
Marking device
Case style TO-263AB (D²PAK)
MIN.
-
-
-
-
-
TYP.
-
-
MAX.
300
1.7
-
40
2.0
-
0.07
-
HFA08TB120S
UNITS
°C
K/W
g
oz.
Revision: 26-Feb-16
2
Document Number: 94046
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