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VS-HFA06TB120SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Specified at operating conditions
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VS-HFA06TB120SPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
IF = 6.0 A
Maximum forward voltage
VFM
IF = 12 A
IF = 6.0 A, TJ = 125 °C
Maximum reverse 
leakage current
VR = VR rated
IRM
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.7
3.5
2.4
0.26
110
9.0
8.0
MAX.
-
3.0
3.9
2.8
5.0
500
14
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of recovery current
during tb
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
dI(rec)M/dt1
dI(rec)M/dt2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 6.0 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
-
26
-
53
-
87
-
4.4
-
5.0
-
116
-
233
-
180
-
100
MAX.
-
80
130
8.0
9.0
320
585
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance, 
junction to case
Thermal resistance, 
junction to ambient
Thermal resistance, 
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Marking device
Case style TO-263AB (D2PAK)
MIN.
-
-
-
-
-
-
TYP.
-
-
MAX.
300
2.0
UNITS
°C
-
80
K/W
0.5
-
2.0
-
g
0.07
-
oz.
HFA06TB120S
Revision: 26-Feb-16
2
Document Number: 94039
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000