VS-FCSP05H40TR Datasheet, PDF (2/6 Pages) Vishay Siliconix – Supplied tested and on tape and reel

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VS-FCSP05H40TR
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current at 25 °C
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_PCB = 114 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 2.0 A, L = 5.0 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
0.5
190
10
5
0.5
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
0.5 A
1A
0.5 A
1A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
Maximum reverse
leakage current
See fig. 2
Maximum junction capacitance
I_RM ⁽¹⁾
C_T
T_J = 25 °C
V_R = 20 V
V_R = 10 V
V_R = 5 V
V_R = Rated V_R
T_J = 125 °C
V_R = 20 V
V_R = 10 V
V_R = 5 V
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Maximum voltage rate of charge
dV/dt
Rated V_R
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TYP.
0.48
0.54
0.38
0.46
1
0.2
0.08
0.05
0.5
0.2
0.15
0.125
-
-
MAX. UNITS
0.52
0.58
V
0.42
0.50
10
0.5
µA
0.25
0.15
2
1
mA
0.8
0.5
90
pF
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Typical thermal resistance,
junction to PCB
R_thJL ⁽²⁾
DC operation
Maximum thermal resistance,
junction to ambient
R_thJA
TEST CONDITIONS
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted on minimum footprint PCB}
VALUES
- 55 to 150
UNITS
°C
35
°C/W
150
Revision: 04-Jul-11
2
Document Number: 94491
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