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VS-ETU3006S-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast recovery time | |||
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www.vishay.com
VS-ETU3006S-M3, VS-ETU3006-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
30
trr
TJ = 25 °C
-
45
TJ = 125 °C
-
100
TJ = 25 °C
IF = 30 Aï
-
5.6
IRRM
dIF/dt = 200 A/μsï
TJ = 125 °C
VR = 200 V
-
10
TJ = 25 °C
Qrr
TJ = 125 °C
-
127
-
580
MAX.
45
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Thermal resistance,ï
junction to case
RthJC
Thermal resistance,ï
junction to ambient
RthJA
Typical socket mount
Thermal resistance,ï
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D2PAK
Case style TO-262
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
0.95
1.4
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETU3006S
ETU3006-1
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
1000
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.0
0.5
1.0
1.5
2.0 2.5
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
175°C
150°C
125°C
100°C
75°C
50°C
25°C
0.001
0
100 200 300 400 500 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 09-Jul-15
2
Document Number: 93592
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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