VS-ETU0805-M3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultrafast soft recovery time

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VS-ETU0805-M3, VS-ETU0805FP-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
28
I_F = 8 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
54
t_rr
T_J = 25 °C
-
50
T_J = 125 °C
-
90
I_RRM
T_J = 25 °C
I_F = 8 A
-
dI_F/dt = 200 A/μs
7.0
T_J = 125 °C
V_R = 200 V
-
10
T_J = 25 °C
Q_rr
T_J = 125 °C
-
180
-
450
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
junction to case
FULL-PAK
R_thJC
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
MIN.
-65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
2.0
4.4
-
MAX.
175
2.6
5.5
50
0.5
-
2.0
-
0.007
-
12
-
(10)
ETU0805
ETU0805FP
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94813
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