VS-ETH3006S-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast recovery time

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VS-ETH3006S-M3, VS-ETH3006-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
I_F = 30 A
dI_F/dt = 200 A/μs
V_R = 200 V
T_J = 125 °C
-
26
-
26
-
70
-
3.5
-
7.6
-
50
-
280
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style D²PAK modified
Case style TO-262
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
UNITS
°C
0.95
1.4
°C/W
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETH3006S
ETH3006-1
g
oz.
kgf · cm
(lbf · in)
1000
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 25 °C
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
0.01
0.001
25 °C
0.0001
0
100 200 300 400 500 600
Reverse Voltage - V_R (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-Jul-15
2
Document Number: 93574
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