VS-ETH1506S-M3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 15 A FRED Pt®

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VS-ETH1506S-M3, VS-ETH1506-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
21
I_F = 15 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
25
t_rr
T_J = 25 °C
-
29
T_J = 125 °C
-
65
I_RRM
T_J = 25 °C
I_F = 15 A
-
3.9
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 390 V
-
7.0
T_J = 25 °C
Q_rr
T_J = 125 °C
-
60
-
240
t_rr
I_F = 15 A
-
42
I_RRM
T_J = 125 °C
dI_F/dt = 800 A/μs
-
21
Q_rr
V_R = 390 V
-
480
MAX.
26
36
-
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D²PAK modified
Case style TO-262
MIN.
- 65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
UNITS
°C
1.3
1.51
°C/W
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETH1506S
ETH1506-1
g
oz.
kgf · cm
(lbf · in)
Revision: 28-Sep-12
2
Document Number: 93573
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