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VS-ETH1506-M3 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Hyperfast Rectifier, 15 A FRED Pt
VS-ETH1506-M3, VS-ETH1506FP-M3
Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
21
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
25
trr
TJ = 25 °C
-
29
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
TJ = 125 °C
-
65
TJ = 25 °C
IF = 15 A
-
3.9
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 390 V
-
7.0
TJ = 25 °C
Qrr
TJ = 125 °C
-
60
-
240
trr
IF = 15 A
-
42
IRRM
TJ = 125 °C
dIF/dt = 800 A/μs
-
21
Qrr
VR = 390 V
-
480
MAX.
26
36
-
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Thermal resistance,
junction to case
FULL-PAK
RthJC
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
MIN.
- 65
-
-
-
-
-
-
6
(5)
TYP.
-
1.2
3.7
-
MAX.
175
1.4
4.3
70
0.5
-
2
-
0.07
-
12
-
(10)
ETH1506
ETH1506FP
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93522
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 11-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000