VS-CPH3006L-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low forward voltage drop

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VS-CPH3006L-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
I_F = 15 A, dI_F/dt = 100 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
21
-
25
-
29
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 15 A
dI_F/dt = 200 A/μs
V_R = 390 V
-
65
-
3.9
-
7.0
-
60
-
240
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to case per package
Thermal resistance,
junction to ambient per leg
Thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247 long lead 3-pins
MIN.
-65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX. UNITS
175
°C
1.1
1.4
0.55
0.7
°C/W
-
40
0.4
-
6.0
-
0.21
-
-
12
(10)
CPH3006L
g
oz.
kgf cm
(lbf in)
Revision: 10-Jul-15
2
Document Number: 95711
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