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VS-APH3006HN3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast soft recovery time | |||
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www.vishay.com
VS-APH3006HN3, VS-EPH3006HN3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
26
trr
TJ = 25 °C
-
26
TJ = 125 °C
-
70
TJ = 25 °C
IF = 30 Aï
-
3.5
IRRM
dIF/dt = 200 A/μsï
TJ = 125 °C
VR = 200 V
-
7.6
TJ = 25 °C
Qrr
TJ = 125 °C
-
50
-
280
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,ï
junction to case
Thermal resistance,ï
junction to ambient per leg
Thermal resistance,ï
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-247AC
Case style TO-247AC modified
MIN.
-65
-
-
-
-
-
1.2
(10)
TYP.
-
MAX.
175
UNITS
°C
0.7
1.1
°C/W
-
70
0.5
-
5.5
-
0.2
-
-
2.4
(20)
APH3006H
EPH3006H
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94867
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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