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VS-8TQ080SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Schottky Rectifier
VS-8TQ080SPbF, VS-8TQ100SPbF
Vishay High Power Products Schottky Rectifier, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
8A
16 A
TJ = 25 °C
8A
16 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D2PAK
VALUES
- 55 to 175
UNITS
°C
2.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
8TQ080S
8TQ100S
www.vishay.com
2
For technical questions, contact: diodestech@vishay.com
Document Number: 94266
Revision: 15-Mar-10