VS-8EWL06FN-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultralow VF Ultrafast Rectifier, 8 A FRED Pt

www.vishay.com
VS-8EWL06FN-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
87
Reverse recovery time
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
60
t_rr
T_J = 25 °C
-
170
Peak recovery current
Reverse recovery charge
T_J = 125 °C
-
250
I_RRM
T_J = 25 °C
I_F = 8 A
-
dI_F/dt = 200 A/μs
15
T_J = 125 °C
V_R = 390 V
-
20
T_J = 25 °C
Q_rr
T_J = 125 °C
-
1.3
-
2.6
MAX.
-
100
-
-
-
-
-
-
UNITS
ns
A
uC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
TYP.
-
MAX.
175
1.8
2.2
0.3
0.01
8EWL06FN
UNITS
°C
°C/W
g
oz.
100
T_J = 175 °C
10
1
T_J = 125 °C
T_J = 25 °C
0.1
0.4
0.6 0.8 1.0 1.2
1.4 1.6
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
0.001
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
0.0001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-Oct-16
2
Document Number: 93240
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000