VS-8EWH06FN-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

www.vishay.com
VS-8EWH06FN-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
21
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
18
t_rr
T_J = 25 °C
-
25
T_J = 125 °C
-
34
I_RRM
T_J = 25 °C
I_F = 8 A
-
dI_F/dt = 200 A/μs
3.3
T_J = 125 °C
V_R = 390 V
-
4.8
T_J = 25 °C
Q_rr
T_J = 125 °C
-
39
-
90
MAX.
UNITS
22
ns
-
-
-
A
-
-
nC
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
T_J, T_Stg
R_thJC
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
TYP.
-
MAX.
175
1.8
2.2
0.3
0.01
8EWH06FN
UNITS
°C
°C/W
g
oz.
100
T_J = 175 °C
10
1
T_J = 125 °C
T_J = 25 °C
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-Oct-16
2
Document Number: 93238
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000