VS-8EWFSPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Glass passivated pellet chip junction

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VS-8EWF..SPbF Soft Recovery Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
8 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.3
25.6
0.93
0.1
4
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Snap factor
S
TEST CONDITIONS
I_F at 8 A_pk
25 A/μs
T_J = 25 °C
VALUES
270
4.2
1
0.6
UNITS
ns
A
μC
I_FM
t_rr
t_a t_b
di
t
dt
Q_rr
I_rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
T_J, T_Stg
R_thJC
DC operation
R_thJA ⁽¹⁾
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
Note
(1) _{When mounted on 1" square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/Wï€} 
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
-40 to +150
UNITS
°C
2.5
°C/W
50
1
g
0.03
oz.
8EWF12S
Revision: 16-Jan-17
2
Document Number: 94109
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