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VS-80EPS08PBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Input Rectifier Diode, 80 A
80EPS.. High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.35
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80EPS08
80EPS12
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For technical questions, contact: diodestech@vishay.com
Document Number: 93524
Revision: 07-Jul-09