VS-80EBU02HF4 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Screw mounting only

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VS-80EBU02HF4
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 80 A
V_R = 160 V
dI_F/dt = 200 A/μs
-
40
-
75
-
4.0
-
8.8
-
75
-
310
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to heatsink
R_thCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.5
0.2
-
-
5.02
0.18
-
2.4
-
(20)
80EBU02H
UNITS
°C/W
g
oz.
N·m
(lbf · in)
Revision: 15-Mar-13
2
Document Number: 93996
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