VS-80CPQ150PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Guard ring for enhanced ruggedness and long term reliability

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VS-80CPQ150PbF, VS-80CPQ150-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
Maximum reverse
leakage current per leg
I_RM
See fig. 2
Typical junction capacitance per leg
C_T
Typical series inductance per leg
L_S
Maximum voltage rate of change
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
40 A
80 A
40 A
80 A
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.82
0.97
0.67
0.80
10
12
-
-
-
MAX.
0.86
1.09
0.71
0.85
200
UNITS
V
μA
26
1100
7.5
10 000
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
R_thJC
DC operation
See fig. 4
DC operation
Typical thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES
- 55 to 175
UNITS
°C
0.6
0.3
°C/W
0.24
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80CPQ150
Revision: 31-Aug-11
2
Document Number: 94257
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