VS-80CPH03-F3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low forward voltage drop

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VS-80CPH03-F3, VS-80CPH03-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
t_rr
T_J = 25 °C
-
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 40 A
-
dI_F/dt = - 200 A/μs
V_R = 200 V
-
-
-
TYP.
34
-
41
62
3.3
8.5
68
265
MAX.
-
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX. UNITS
175
°C
0.47 0.80
-
40
°C/W
0.4
-
6.0
-
0.22
-
12
-
(10)
80CPH03
g
oz.
kgf cm
(lbf in)
Revision: 07-Jul-15
2
Document Number: 93270
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