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VS-80APS16PBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Glass passivated pellet chip junction
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VS-80APS16PbF, VS-80APS16-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage 
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance, 
junction to ambient
Typical thermal resistance, 
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES
-40 to +150
UNITS
°C
0.35
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80APS16
150
VS-80APS16
140
RthJC (DC) = 0.35 K/W
130
Ø
Conduction angle
120
110
100
90
80
0
30°
60°
90°
120°
180°
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
VS-80APS16
RthJC (DC) = 0.35 K/W
140
130
120
110
100
90
0
Ø
Conduction period
30°
60°
90°
120°
180°
DC
20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 11-Feb-16
2
Document Number: 93795
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