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| VS-70MT060WSP Datasheet, PDF (2/12 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Rectifier and PFC | |||
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VS-70MT060WSP
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
PFC Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Maximum non-repetitive peak current
Repetitive peak reverse voltage
AP Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum power dissipation
Maximum non-repetitive peak current
Maximum operating junction temperature
Storage temperature range
RMS isolation voltage
SYMBOL
VRRM
IF
PD
IFSM
VRRM
IF
PD
IFSM
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 25 °C
VRMS t = 1 s, TJ = 25 °C
MAX.
600
82
55
181
360
600
21
13
32
60
150
-40 to +150
3500
UNITS
V
A
W
A
V
A
W
A
°C
W
ïR CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
70MT060WSP 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235
UNITS
°C/W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Blocking voltage
BVRRM
IR = 250 μA
Input
Rectifier
Bridge
Reverse leakage current
Forward voltage drop
IRRM
VFM
VRRM = 1200 V
VRRM = 1200 V, TJ = 150 °C
IF = 20 A
IF = 20 A, TJ = 150 °C
Forward slope resistance
Conduction threshold voltage
Collector to emitterï
breakdown voltage
rt
VT
BVCES
TJ = 150 °C
VGE = 0 V, IC = 0.5 mA
Temperature coefficient ofï
breakdown voltage
ïVBR(CES)/ïTJ IC = 0.5 mA (25 °C to 125 °C)
PFC IGBT
Collector to emitter voltage
Gate threshold voltage
VCE(ON)
VGE(th)
VGE = 15 V, IC = 40 A
VGE = 15 V, lC = 40 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
Collector to emitterï
leakage current
ICES
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
Gate to emitter leakage
IGES
VGE = ± 20 V
Forward voltage drop
VFM
IF = 40 A
IF = 40 A, TJ = 125 °C
PFC Diode
Blocking voltage
Reverse leakage current
BVRM
IRM
IR = 0.5 mA
VRRM = 600 V
VRRM = 600 V, TJ = 125 °C
AP Diode
Forward voltage drop
VFM
IF = 4 A
IF = 4 A, TJ = 125 °C
MIN.
1200
-
-
-
-
-
-
600
-
-
-
2.9
-
-
-
-
-
600
-
-
-
-
TYP.
-
-
-
1.05
0.94
-
-
MAX. UNITS
-
V
0.1
mA
3.0
1.2
V
1.0
8.7 mï
0.94 V
-
-
V
0.6
-
V/°C
1.93 2.15
V
2.30 2.55
-
5.6
V
-
0.1
mA
-
1
- ± 100 nA
1.76 2.23
1.34 1.62 V
-
-
-
75
μA
-
0.5 mA
1.1 1.28
V
0.95 1.09
Revision: 10-Jun-15
2
Document Number: 93410
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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