VS-70HF Datasheet, PDF (2/10 Pages) Vishay Siliconix – Standard Recovery Diodes Stud Version), 70 A

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VS-70HF(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
SYMBOL
I_F(AV)
I_F(RMS)
I_FSM
I²t
I²ïƒ–t
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
70HF(R)
10 TO 120 140/160
180° conduction, half sine wave
70
140
110
110
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
1200
1250
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J =
T_J maximum
1000
1050
7100
6450
t = 10 ms _{100 % VRRM}
t = 8.3 ms ^reapplied
5000
4550
t = 0.1 ms to 10 ms, no voltage reapplied
71 000
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
(I >  x I_F(AV)), T_J = T_J maximum
0.79
1.00
UNITS
A
°C
A
A
A²s
A²ïƒ–s
V
(16.7 % x  x I_F(AV) < I <  x I_F(AV)), T_J = T_J maximum
2.33
m
(I >  x I_F(AV)), T_J = T_J maximum
1.53
I_pk = 220 A, T_J = 25 °C, t_p = 400 μs rectangular wave 1.35
1.46
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,case to heatsink
Maximum allowable mounting torque
(+0 %, -10 %)
T_J, T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut ⁽¹⁾
Lubricated thread, tighting on nut ⁽¹⁾
Not lubricated thread, tighting on hexagon ⁽²⁾
Lubricated thread, tighting on hexagon ⁽²⁾
Approximate weight
Case style
Notes
(1) _{Recommended for pass-through holes}
(2) _{Recommended for holed threaded heatsinks}
See dimensions - link at the end of datasheet
70HF(R)
10 TO 120 140/160
-65 to 180
-65 to
150
UNITS
°C
0.45
K/W
0.25
3.4 (30)
2.3 (20)
4.2 (37)
N·m
(lbf · in)
3.2 (28)
17
g
0.6
oz.
DO-203AB (DO-5)
R_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.08
0.06
120°
0.10
0.11
90°
0.13
60°
0.19
0.14
T_J = T_J maximum
K/W
0.20
30°
0.30
0.30
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
Revision: 29-Jan-14
2
Document Number: 93521
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