VS-6ESU06-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast Rectifier

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VS-6ESU06-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
42
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
t_rr
T_J = 25 °C
-
-
-
58
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
85
I_F = 6 A
-
10
dI_F/dt = 500 A/μs
V_R = 400 V
-
15
-
290
-
620
MAX.
-
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to solder pad
T_J, T_Stg
R_thJ-Sp
Approximate weight
Marking device
Case style TO-277A (SMPC)
MIN.
-65
-
TYP.
-
MAX.
175
2.4
3.5
0.1
0.0035
NEU6
UNITS
°C
°C/W
g
oz.
100
10
T_J = 175 °C
1
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10
150 °C
125 °C
1
0.1
25 °C
0.01
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Nov-14
2
Document Number: 94986
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