VS-6ESH06-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier

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VS-6ESH06-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
33
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
t_rr
T_J = 25 °C
-
-
-
40
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
75
I_F = 6 A
-
6.8
dI_F/dt = 500 A/μs
V_R = 400 V
-
11
-
140
-
400
MAX.
-
40
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to solder pad
T_J, T_Stg
R_thJ-Sp
Approximate weight
Marking device
Case style TO-277A (SMPC)
MIN.
-65
-
TYP.
-
MAX.
175
2.4
3.5
0.1
0.0035
NEH6
UNITS
°C
°C/W
g
oz.
100
10
T_J = 175 °C
1
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
0.1
0.2
0.6
1.0
1.4
1.8
2.2
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
175 °C
150 °C
125 °C
0.1
25 °C
0.01
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Nov-14
2
Document Number: 94984
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