VS-6CWUT04 Datasheet, PDF (2/9 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0

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VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
Non-repetitive avalanche
energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 166 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1.3 A, L = 16 mH
Limited by frequency of operation and time pulse duration
so that T_J < T_J max. I_AS at T_J max. as a function of time pulse
(see fig. 8)
VALUES
3
6
440
70
14
I_AS at
T_J max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
V_FM ⁽¹⁾
Reverse leakage current per leg
I_RM ⁽¹⁾
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 125 °C
6A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.535
0.615
0.485
0.570
-
-
240
8.0
-
MAX. UNITS
0.600
0.680
V
0.540
0.640
25
μA
3
mA
-
pF
-
nH
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
T_J, T_Stg
R_thJC DC operation
Typical thermal resistance,
case to heatsink
R_thCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
4.7
2.35
°C/W
0.3
0.3
g
0.01
oz.
6CUT04
6CWT04FN
Revision: 03-Nov-11
2
Document Number: 94650
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