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VS-6CWQ03FN Datasheet, PDF (2/8 Pages) Vishay Siliconix – Schottky Rectifier
VS-6CWQ03FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
3A
6A
3A
6A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.45
0.52
0.35
0.46
2
50
0.22
32.86
290
5.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
per leg
per device
RthJC
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
UNITS
- 40 to 150
°C
4.7
°C/W
2.35
0.3
g
0.01
oz.
6CWQ03FN
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94247
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 28-Jan-11