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| VS-6CWH02FNHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast Rectifier, 2 x 3 A FRED Pt® | |||
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www.vishay.com
VS-6CWH02FNHM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
trr
TJ = 25 °C
-
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
IF = 3 Aï
-
VR = 160 Vï
dIF/dt = 200 A/μs
-
-
-
TYP.
20
19
26
3.1
4.6
30
60
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
Maximum junction andï
storage temperature range
Thermal resistance,ï
junction to case per leg
Thermal resistance,ï
junction to ambient per leg
Thermal resistance,ï
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
- 65
-
-
-
-
Weight
-
Mounting torque
6.0
(5.0)
Marking device
Case style D-PAK
TYP.
-
-
-
-
0.3
0.01
-
MAX.
175
UNITS
°C
5
80
°C/W
-
-
g
-
oz.
12
kgf · cm
(10)
(lbf · in)
6CWH02FNH
Revision: 02-Aug-12
2
Document Number: 94743
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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