VS-60EPU04PBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Low forward voltage drop

VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
50
Reverse recovery time
t_rr
T_J = 25 °C
-
85
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 60 A
-
dI_F/dt = 200 A/μs
V_R = 200 V
-
-
-
145
8.8
15.4
375
1120
MAX.
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
5.5
0.2
-
MAX.
0.70
-
-
-
2.4
(20)
60EPU04
60APU04
UNITS
K/W
g
oz.
N·m
(lbf · in)
Revision: 09-Jul-15
2
Document Number: 94022
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000